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VMK 90-02T2
10
1000
V
V GS 8
V DS = 100 V
I D = 40 A
I G = 2 mA
I D
A
100
Limited by R DS(on)
t = 1 ms
6
4
10
t = 10 ms
2
T K = 25 ° C
T J = 150 ° C
t = 100 ms
0
1
non-repetitive
0
100
200
300
nC
400
1
10
100
V
1000
100
nF
Q g
Fig. 7 Typical turn-on gate charge characteristics
200
A
V DS
Fig. 8 Forward Safe Operating Area, I D = f (V DS )
C
10
1
Ciss
Coss
Crss
I S
150
100
50
T J = 125 ° C
T J = 25 ° C
0.1
0
V
0
5
10
15
20 25
0.00
0.25
0.50
0.75
1.00
1.25 V 1.50
100
V DS
Fig. 9 Typical capacitances C = f (V DS ), f = 1 MHz
1
V SD
Fig. 10 Typical forward characteristics of reverse
diode, I S = f (V SD )
s
K/W
D = 0.5
g 80
fs
D = 0.2
0.1
60
40
Z thJK
D = 0.1
D=0.05
D=0.0 2
0.01
D = single pulse
20
0
0.001
0
20
40
60
80
100 A 120
0.001
0.01
0.1
1
s 10
I D
Fig. 11 Typical transconductance g fs = f (I D )
? 2000 IXYS All rights reserved
t
Fig. 12 Transient thermal resistance Z thJK = f (t p )
4-4
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